Semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI; HATTORI AKIRA |
| 发表日期 | 1988-05-07 |
| 专利号 | JP1988102389A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which satisfies high output characteristics and low noise characteristics by a method wherein a plurality of light emission points are provided in one chip of the semiconductor laser and different thicknesses are given to the respective cladding layers between active layers and current blocking layers corresponding to the respective light emission points and dielectric films with the same reflectance are formed at the respective light emission points. CONSTITUTION:The thickness of 2nd cladding layer 3a directly under a 2nd light emission point 11 is so controlled as to be able to induce self-oscillation and the thickness of 1st cladding layer 3 directly under a 1st light emission point 10 is so controlled as to induce basic lateral mode oscillation which is vertically single mode and stable. When the self-oscillation is induced, the line width of a laser oscillation spectrum is widened and the interfering distance of the laser beam is shortened. Therefore, when the semiconductor laser is applied to an optical disc and so forth, the influence of the returning light from the optical system is reduced so that a stable low noise characteristics can be obtained. |
| 公开日期 | 1988-05-07 |
| 申请日期 | 1986-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81530]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,HATTORI AKIRA. Semiconductor laser. JP1988102389A. 1988-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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