Semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1983-10-19 |
| 专利号 | JP1983178582A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a laser which has the prescribed characteristics with good reproducibility by burying a clad layer between the layers of two active layers in the groove formed in a semiconductor substrate and forming planely in advance the other one layer. CONSTITUTION:An N type InGaAsP active layer 22, an N type InP layer 23 are superposed on (100) surface of an N type InP layer 21, and anisotropically etched, and an inverted trapezoidal strip groove is formed in (011) direction. Further, a P type InGaAsP clad 24, a no-added InGaAsP active layer 25, an N type InP clad 26, an N type InGaAsP contact 27 are superposed, and electrodes 28, 29 are attached. Forbidden band width Eg is selected to the relation of Eg21>Eg24>Eg22, Eg23 Eg21, Eg25 Eg22, as a double carrier confinement structure. According to this structure, an oscillation threshold current is reduced, stable lateral mode can be obtained, a buried grown layer in the groove is formed only of 2 layers, control can be facilitated, and a semiconductor laser which has the prescribed characteristics can be obtained with good reproducibility. |
| 公开日期 | 1983-10-19 |
| 申请日期 | 1982-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Semiconductor light emitting device. JP1983178582A. 1983-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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