Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078273A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve reproducibility and reliability and to realize the flatness of the surface by removing the rib-shaped II-VI compound semiconductor on a light guide path and the resist on it. CONSTITUTION:A GaAs buffer layer 102, an n-Al0.5Ga0.5As clad layer 103, an Al0.15Ga0.85As active layer 104, a p-Al0.5Ga0.5As clad layer 105, and a p-GaAs contact layer 106 are stacked in order on an n-GaAs substrate 101 so as to form a substrate which has DH structure. An etching mask such as SiO2, etc., is formed, and with this as a mask, the substrate is etched down to the middle of the layer 105 so as to form a rib. ZnSe is grown epitaxially so as to bury the rib. At this time, at the flat part excluding the rib region, a single crystal ZnSe 109, and on the film 107, polycrystalline ZnSe 108, grow. A resist layer 110 is formed at the surface, and is etched using RIBE, and remaining resist is removed so as to flatten it, thus a P type electrode 111 and N type electrode 112 are formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Manufacture of semiconductor laser. JP1991078273A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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