Semiconductor laser device
文献类型：专利
| 作者 | MIHASHI YUTAKA; KAKIMOTO SHIYOUICHI; HIRONAKA MISAO; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1984-04-03 |
| 专利号 | JP1984057487A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To manufacture a multimode laser with small non-spot astigmation by a method wherein a clad layer near the end of laser beam emitting channel of a gain guide type laser is made thicker near the stripe type current supplying region and thinner distant from the region providing the clad layer with a waveguide filling the effective role of refractive guide. CONSTITUTION:Before starting epitaxial growing operation, an N type GaAs substrate 1 is preliminarily etched by mask and etching solution excluding the part directly below the stripe type current supplying region so that the part A with specified length near the end is made thicker than the remaining region i.e. forming a groove 9 with a concave section. When an N type AlxGa1-xAs clad layer 2 is epitaxially grown on such an N type GaAs substrate 1, the grown surface becomes almost flat when the clad layer 2 is completely grown. Therefore the thickness of said layer 2 is thicker at the A part near the end directly below the stripe becoming thinner at both sides. The non-spot astigmation of the gain guide type laser may be improved by means of providing the part A near the end of a laser resonator with said structure. |
| 公开日期 | 1984-04-03 |
| 申请日期 | 1982-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81538]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,KAKIMOTO SHIYOUICHI,HIRONAKA MISAO,et al. Semiconductor laser device. JP1984057487A. 1984-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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