中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Variable wavelength semiconductor laser

文献类型:专利

作者SAKANO SHINJI; OKA SATOHIKO; OKAI MAKOTO; KAYANE NAOKI
发表日期1992-02-27
专利号JP1992061183A
著作权人HITACHI LTD
国家日本
文献子类发明申请
其他题名Variable wavelength semiconductor laser
英文摘要PURPOSE:To provide a variable wavelength laser having a stable and wider variable wavelength range by constructing a title laser such that the ratios of a refractive index change and a gain change to the carrier density of a first optical waveguide are less than those of a second optical waveguide, and that the phases of diffraction gratings of first and second regions are reversed at a composite part of the two regions. CONSTITUTION:An unevened diffraction grating 6 is formed on an n-type InP substrate 9. The diffraction grating 6 is adapted to be a phase shift type having a phase shift point 5 reversed in its phase at the middle of a laser. There are formed over the entire surface of the substrate a 3mum band gap wavelength InGaAsP tank 2, and a 54mum gain peak wavelength multiple quantum well layer 1, and for one of regions where the phase shift point 5 is changed a crystal grown layer is removed by selective etching until the surface of the diffraction grating 6 appears. Thereafter, there are selectively grown on the region 12 where the diffraction on grating 6 is exposed a 1mum lambdag InGaAsP layer 4, a 35mum lambdag InGaAsP layer 3, and a lambdas =53mum active layer 14.
公开日期1992-02-27
申请日期1990-06-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/81569]  
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
SAKANO SHINJI,OKA SATOHIKO,OKAI MAKOTO,et al. Variable wavelength semiconductor laser. JP1992061183A. 1992-02-27.

入库方式: OAI收割

来源:西安光学精密机械研究所

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