Variable wavelength semiconductor laser
文献类型：专利
| 作者 | SAKANO SHINJI; OKA SATOHIKO; OKAI MAKOTO; KAYANE NAOKI |
| 发表日期 | 1992-02-27 |
| 专利号 | JP1992061183A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To provide a variable wavelength laser having a stable and wider variable wavelength range by constructing a title laser such that the ratios of a refractive index change and a gain change to the carrier density of a first optical waveguide are less than those of a second optical waveguide, and that the phases of diffraction gratings of first and second regions are reversed at a composite part of the two regions. CONSTITUTION:An unevened diffraction grating 6 is formed on an n-type InP substrate 9. The diffraction grating 6 is adapted to be a phase shift type having a phase shift point 5 reversed in its phase at the middle of a laser. There are formed over the entire surface of the substrate a 3mum band gap wavelength InGaAsP tank 2, and a 54mum gain peak wavelength multiple quantum well layer 1, and for one of regions where the phase shift point 5 is changed a crystal grown layer is removed by selective etching until the surface of the diffraction grating 6 appears. Thereafter, there are selectively grown on the region 12 where the diffraction on grating 6 is exposed a 1mum lambdag InGaAsP layer 4, a 35mum lambdag InGaAsP layer 3, and a lambdas =53mum active layer 14. |
| 公开日期 | 1992-02-27 |
| 申请日期 | 1990-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81569]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAKANO SHINJI,OKA SATOHIKO,OKAI MAKOTO,et al. Variable wavelength semiconductor laser. JP1992061183A. 1992-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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