Semiconductor laser device and manufacturing method thereof
文献类型：专利
| 作者 | KASHIMA, TAKAYUKI; MAKITA, KOUJI; YOSHIKAWA, KENJI |
| 发表日期 | 2009-03-17 |
| 专利号 | US7505502 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and manufacturing method thereof |
| 英文摘要 | In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element li0 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate i0 Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements ii0 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119. |
| 公开日期 | 2009-03-17 |
| 申请日期 | 2006-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KASHIMA, TAKAYUKI,MAKITA, KOUJI,YOSHIKAWA, KENJI. Semiconductor laser device and manufacturing method thereof. US7505502. 2009-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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