Semiconductor laser device
文献类型：专利
| 作者 | KOBAYASHI SHINJI; KAMATA HIROMI; DOBASHI MACHIO |
| 发表日期 | 1992-05-08 |
| 专利号 | JP1992134895A |
| 著作权人 | YOKOGAWA ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase the light confinement effect and enhance insulation characteristics by forming a layer, which contains an active layer and an light guide layer, on a substrate and constituting a buried section after mesa isolation with InAlAs. CONSTITUTION:A buffer layer 2, an active layer 3, and an light guide layer 4 are laminated on an InP substrate 1 where SiO25 is partially formed in a specified spot. The active layer 3 and the light guide layer 4 thereunder are arranged to remain, but other part is removed so as to isolate mesa and expose the buffer layer 2. Then, an InAlAs-made layer 20 whose thickness is similar to that of the active layer 3 and the light guide layer 4, is adapted to make epitaxial growth thereon, thereby forming a buried section. Then, a layer 5 is removed where a p-InP layer 7 and pInGaAs layer 8 is formed based on the epitaxial growth. This construction makes it possible to improve light confinement effect and insulation characteristics since the band gap is wide and the lattice matching is excellent. |
| 公开日期 | 1992-05-08 |
| 申请日期 | 1990-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | YOKOGAWA ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOBAYASHI SHINJI,KAMATA HIROMI,DOBASHI MACHIO. Semiconductor laser device. JP1992134895A. 1992-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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