Semiconductor light emitting element
文献类型：专利
| 作者 | FUKUZAWA TADASHI; TAKAHASHI SUSUMU; NAKAMURA MICHIHARU |
| 发表日期 | 1984-09-27 |
| 专利号 | JP1984171189A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To modulate the intensity of light at voltage pulses by controlling the oscillation of a laser element by means of a control electrode by a method wherein semiconductor laminated regions oscillating laser having conductivity types reverse to each other and an insulation gate type FET whose laser element part is electrically connected are provided in integration. CONSTITUTION:Each layer of a clad layer 2, an active layer 3, a clad layer 4, and an impurity region 5 is successively formed on the upper surface of a semiconductor substrate An SiO2 film of a fixed thickness is formed on this region 5, and this film is etched in stripe form. Next, after growing a high resistant layer 6 again by an epitaxial method to a fixed thickness, n regions serving as the source and drain regions are formed by ion implantation. Further, a region 13 is formed by diffusing Zn to a part serving as the current path of the laser part. The source electrode 9, gate electrode 10, and drain electrode 11 are vapor-deposited, and the p-side electrode 14 is formed on the opposite side of the substrate Then, the oscillation of the laser element is controlled by means of the gate electrode 10, and then the intensity of light is modulated at voltage pulses. |
| 公开日期 | 1984-09-27 |
| 申请日期 | 1984-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,TAKAHASHI SUSUMU,NAKAMURA MICHIHARU. Semiconductor light emitting element. JP1984171189A. 1984-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。