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文献类型:专利
作者 | NOMURA HIDENORI; SUGIMOTO MITSUNORI; SUZUKI AKIRA |
发表日期 | 1988-04-20 |
专利号 | JP1988018878B2 |
著作权人 | NIPPON DENKI KK |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To form a buried semiconductor laser element with multiaxis mode with a good reproducibility by a method wherein a width of a striped active layer which is buried are varied at each region. CONSTITUTION:A width of a striped active region 20 in a double heterojunction structure which is buried with a layer having a wide forbidden band width is arranged to be 2mum, and notches 21-24 with length of 3mum and depth of 0.5mum are provided to be distributed at random. Thereby while maintaining a substrate traverse mode, a semiconductor laser which oscillates stably in 3-5 axial modes can be obtained and it can be used in a multimode type optical fiber transmission system. |
公开日期 | 1988-04-20 |
申请日期 | 1981-02-24 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/81590] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | NOMURA HIDENORI,SUGIMOTO MITSUNORI,SUZUKI AKIRA. -. JP1988018878B2. 1988-04-20. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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