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文献类型：专利
| 作者 | YAMASHITA SHIGEO; NAKATSUKA SHINICHI; MATSUEDA HIDEAKI; KAJIMURA TAKASHI |
| 发表日期 | 1989-01-13 |
| 专利号 | JP1989001951B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the floating capacity and to enable to form a pattern of a complicated and precise electronic circuit by forming a semiconductor conductive layer at part of a semi-insulating semiconductor substrate, partly forming a laser double hetero structure, and forming an electronic circuit out of a laser oscillating region. CONSTITUTION:A striped recess groove 17 is formed on an N type GaAs conductive layer 2, and an N type Ga0.6Al0.4As clad layer 3, a Ga0.95Al0.05As active layer 4, a P type Ga0.6Al0.4As clad layer 5, and a P type GaAs cap layer 6 are formed on an N type GaAs conductive layer 2. A laser element region remains, an N type GaAs semiconductor conductive layer 18, a semi-insulating GaAs substrate surface 19 are etched until they are exposed. Si ions are implanted to the exposed substrate to form the active region, electrode region and resistance region of the electronic circuit. Thus, the integration of the semiconductor laser element of the low threshold current value of the electronic circuit is facilitated, the connection of the laser to the circuit can be improved, thereby improving the high freuqncy characteristics. |
| 公开日期 | 1989-01-13 |
| 申请日期 | 1983-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81598]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,NAKATSUKA SHINICHI,MATSUEDA HIDEAKI,et al. -. JP1989001951B2. 1989-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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