Semiconductor laser
文献类型：专利
| 作者 | ISHIKAWA HIDETO; ISHIBASHI AKIRA; MORI YOSHIFUMI; IKEDA MASAO |
| 发表日期 | 1987-03-05 |
| 专利号 | JP1987051282A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To decrease scattering of LA phonons in clad layers, to improve heat conductivity and to improve the characteristics and the life of a laser, by providing a super-lattice structure, wherein a least one of the clad layers provided in adjacent to an active layer has a specified composition. CONSTITUTION:First and second clad layers 12 and 14 or the first clad layer is made to be a semiconductor layer having a super-lattice structure. For example, in an AlGaAs three-element semiconductor laser, the super-lattice structure of (AlAs)n and (GaAs)m, in which thin film semiconductors comprising lower two-element (n) and (m) atomic layers of AlAs and GaAs are periodically overlapped. The composition of the clad layers having said super-lattice structure is selected as follows. The average composition of the entire clad layers has the confining effect of carriers and light for the active layer 13 at the inherent crystal state, e.g., in AlGaAs. The difference in refractive indexes and the difference in energy band gaps, which are required for the active layer 13, are provided. Namely, the composition has the smaller refractive index and the larger energy band gap with respect to the active layer 13. |
| 公开日期 | 1987-03-05 |
| 申请日期 | 1985-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | ISHIKAWA HIDETO,ISHIBASHI AKIRA,MORI YOSHIFUMI,et al. Semiconductor laser. JP1987051282A. 1987-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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