Semiconductor laser
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAYANE NAOKI; TAKAHASHI TAKEO; SAITOU KATSUTOSHI; OOUCHI HIROBUMI |
| 发表日期 | 1983-08-10 |
| 专利号 | JP1983134488A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce reactive current which does not contribute to an oscillation in a laser having a Ga1-xAlxAs(x=0-0.2) active layer disposed elevationally between Ga1-yAlyAs(y=0.3-0.6) clad layers by adding a Ga1-zAlzAs(0.8>=z>=y) layer having the same or larger AlAs mixture crystal ratio of reverse conductive type on the upper clad layer. CONSTITUTION:N type Ga0.55Al0.45As clad layer 2, an undoped Ga87Al0.13As active layer 3 and a P type Ga0.55Al0.45As clad layer 4 are laminated on the overall surface of an N type GaAs substrate 1 formed with a groove at the center, and a liquid phase epitaxial growth is performed. The surface of the layer 4 at this time is formed to be flat, an N type Ga0.4Al0.6As layer 5 is grown on the layer 4, and an N type GaAs layer 6 is covered on the layer 5. Thereafter, a P type diffused region 7 which is intruded into the layer 4 from the surface of the layer 6 is formed corresponding to the groove, a Cr-AuP side electrode 8 is covered on the layer 6 and an N type side electrode 9 of Au-Ge-Ni is covered on the back surface of the substrate |
| 公开日期 | 1983-08-10 |
| 申请日期 | 1982-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81612]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAYANE NAOKI,TAKAHASHI TAKEO,et al. Semiconductor laser. JP1983134488A. 1983-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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