Semiconductor laser device
文献类型：专利
| 作者 | HIRAYAMA FUKUICHI; NAKANO MUNEAKI; WADA MASARU |
| 发表日期 | 1989-10-12 |
| 专利号 | JP1989256187A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To control mode hopping noise by forming a stripe region of the same conductivity as a first clad layer in direction of a cavity in a cap layer and a second clad layer on a substrate and by terminating one end section of the stripe region at a position not reaching an end surface. CONSTITUTION:An n-type GaAs substrate 1, a ridge section 2, a first clad layer 3, an active layer 4, a second clad layer 5, a cap layer 6, a p-side electrode 7, an n-side electrode 8 and a zinc diffusion layer 9 are incorporated, and at least one end section of the zinc diffusion region 9 is terminated at a position apart from an area near an edge surface. To cause self-pulsation, a section whereto current is not supplied is provided in the zinc diffusion region 9 to develop irregular distribution of emission intensity within the active layer 4. Noises due to mode hopping can be controlled in this way. |
| 公开日期 | 1989-10-12 |
| 申请日期 | 1988-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA FUKUICHI,NAKANO MUNEAKI,WADA MASARU. Semiconductor laser device. JP1989256187A. 1989-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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