Optical bistable element
文献类型：专利
| 作者 | HORI YOSHIKAZU; SATO HISANAO; SERIZAWA AKIMOTO |
| 发表日期 | 1987-01-24 |
| 专利号 | JP1987015873A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical bistable element |
| 英文摘要 | PURPOSE:To decrease the driving current and increase the switching speed, by forming a medium which increases reflectivity at or near at least one end face of a semiconductor laser having a saturable absorber inside an optical resonator. CONSTITUTION:A medium which increases reflectivity is formed at or near at least one end face of a semiconductor laser having a saturable absorber inside an optical resonator. For example, an N-InP clad layer 2, an InGaAsP optical active layer 3, an N-InP clad layer 4, a P-InP layer 5, 6, 7 having a P-type impurity diffused therein are formed on an N-type InP substrate Further, an SiN insulating film 8 and an Au reflecting film 9 are provided. No current is injected into the center of the InGaAsP active layer 3 so that this region serves as a saturable absorber in the resonator. Thus, the reflectivity of the end face of the optical resonator is increased to increase the light feedback efficiency, thereby enabling saturation of the saturable absorber to be realized with a relatively weak light output, and thus allowing a bistable operation to be effected with a relatively small injection bias current. In addition, it is made possible to increase the switching speed. |
| 公开日期 | 1987-01-24 |
| 申请日期 | 1985-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81620]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORI YOSHIKAZU,SATO HISANAO,SERIZAWA AKIMOTO. Optical bistable element. JP1987015873A. 1987-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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