Manufacture of semiconductor device
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; OSHIMA MASAAKI; TAKENAKA NAOKI; HASE NOBUYASU |
| 发表日期 | 1987-04-21 |
| 专利号 | JP1987086885A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To obtain a flat layer in a groove in a semiconductor laser of planar buried structure by using 2-phase solution method in case of liquid-phase epitaxially growing a clad layer. CONSTITUTION:A BC laser is formed by sequentially liquid-phase epitaxially growing an n-type InP clad layer 11, an n-type InGaAsP active layer 12, a P-type InP clad layer 13 and a P-type InGaAsP contact layer 14 on a semiconductor substrate having striped groove 10 in a predetermined azimuth. When forming the layers 11, 13, 2-phase solution method is used. Then, the growing film thickness ratio of the flat portions in the groove 10 and out of the groove 10 (n1/n2 and p1/p2) can be increased, the layer 13 does not recess in the groove 10. Then, it can prevent defects or thermal resistance from increasing, thereby increasing the life of the laser. |
| 公开日期 | 1987-04-21 |
| 申请日期 | 1985-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OSHIMA MASAAKI,TAKENAKA NAOKI,et al. Manufacture of semiconductor device. JP1987086885A. 1987-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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