Semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; WADA HIROSHI; MATSUI YASUHIRO |
| 发表日期 | 1990-11-20 |
| 专利号 | JP1990283085A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an element capacity and to improve high speed modulation characteristic by providing a semi-insulating current block layer between a second conductivity type current block layer and a first conductivity type current block layer. CONSTITUTION:A stripelike laminate 61 having a P-type InP lower clad layer 53, a GaInAsP active layer 55, an N-type InP upper clad layer 57 and an N-type GaInAsP Cap layer 59 is provided on an N-type InP substrate 51, and an N-type InP current block layer 63, a semi-insulating current block layer 65 and a P-type InP current block layer 56 are provided sequentially in this order from the substrate 51 side at both side regions of the laminate 61 of the substrate 5 Further, this semiconductor laser has N-type side electrodes 69 on a cap layer 59 and a P-type InP current block layer 67, and a P-type side electrode 71 under the substrate 5 Thus, an element capacity is reduced merely by inserting the layer 65 between P-N reverse bias junctions. |
| 公开日期 | 1990-11-20 |
| 申请日期 | 1989-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,WADA HIROSHI,MATSUI YASUHIRO. Semiconductor laser. JP1990283085A. 1990-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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