Semiconductor laser device and manufacturing method thereof
文献类型：专利
| 作者 | NISHIOKA, YOSHITA; MUGINO, YOICHI; NOMA, TSUGUKI |
| 发表日期 | 2013-12-03 |
| 专利号 | US8599895 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and manufacturing method thereof |
| 英文摘要 | A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0≦x1≦1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0≦x2≦1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0≦x3≦1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4≦x2≦0.8. |
| 公开日期 | 2013-12-03 |
| 申请日期 | 2012-07-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81661]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | NISHIOKA, YOSHITA,MUGINO, YOICHI,NOMA, TSUGUKI. Semiconductor laser device and manufacturing method thereof. US8599895. 2013-12-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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