Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; KAZUMURA MASARU |
| 发表日期 | 1985-12-20 |
| 专利号 | JP1985258992A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To accomplish current stricture and light confinement with good efficiency by a method wherein a double layer thin film consisting of a layer of reverse conductivity type to that of a substrate and a layer of the same conductivity type as that of the substrate is formed on the flat part other than the stepwise difference of the substrate having a stepwise difference, and a thin film of the same conductivity type as that of the substrate is formed at the stepwise difference. CONSTITUTION:A stepwise difference is provided on the (100)-plane of the p type GaAs substrate 10 in parallel with the direction by wet-etching with a photo mask and an H2SO4 series. Next, an n type GaAs current block layer 11 is grown by MOCVD (organic metal vapor phase growth). After the growth, Zn is diffused over the whole region only in the slope of the stepwise difference by diffusion with a depth (h) from the surface 21 of the n type GaAs layer, so that the diffusion front may reach the substrate 10. At this time, this element does not diffuse to the substrate in the presence of the diffusion front in the current block layer 11 in the upper and lower parts of the stepwise difference. Further, a p type Ga1-xAlxAs clad layer 12, a Ga1-yAlyAs active layer 13, an n type Ga1-x AlxAs clad layer 14, and an n type GaAs layer 15 are grown on the current block layer 11 by MOCVD. |
| 公开日期 | 1985-12-20 |
| 申请日期 | 1984-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81670]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,KAZUMURA MASARU. Semiconductor laser device. JP1985258992A. 1985-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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