Semiconductor laser
文献类型：专利
| 作者 | UCHIDA MAMORU |
| 发表日期 | 1990-03-30 |
| 专利号 | JP1990090690A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is large in an output power and easy to control a usable oscillating wavelength by a method wherein an active layer has a single quantum well structure or a multi-quantum well structure. CONSTITUTION:The following are grown in crystal on an n-type GaAs substrate 1: an n-type Al0.5Ga0.5As first clad layer 5; an n-type Al0.3Ga0.7 first guide layer 6; a quantum well GaAs active layer 7; an n-type Al0.3Ga0.7As second optical guide layer 8; an n-type Al0.5Ga0.5As second clad layer 9; and an n-type GaAs contact layer. The layers are doped with impurity as follows: the active layer 7 and the cap layer are 2X10cm in Si concentration and the rest layers are 1X10cm in concentration of Si. An SiO2 mask is formed on the surface of the crystal, and zinc atoms are diffused until a diffusion front 21 of 5X10cm Zn concentration reaches to the lower end of the active layer 7. And, Be is used as a p-type dopant, and Sn and B can be used as an n-type and a p-type dopant respectively. As mentioned above, when the active layer 7 is formed into a quantum well structure, a semiconductor laser can be effectively improved in light emitting efficiency and temperature characteristic and also can oscillate effectively laser light of short wavelength. |
| 公开日期 | 1990-03-30 |
| 申请日期 | 1988-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81673]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UCHIDA MAMORU. Semiconductor laser. JP1990090690A. 1990-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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