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文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; ISHIDA JUJI; NAKADA NAOTARO |
| 发表日期 | 1989-08-09 |
| 专利号 | JP1989037873B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the electrical and optical characteristics by a method wherein after the first grown layer is formed, etching is made to such a depth that a light absorbing layer is properly left so as to form a stripe groove where the first upper clad layer is not exposed and the residual light absorbing layer and a surface protecting layer are evaporated to form the second grown layer. CONSTITUTION:A photoresist 60 covers a surface protecting layer 26 except in the part where a stripe groove is formed of the semiconductor substrate 10 on which the first grown layer 20 is formed. The surface protecting layer 26, an evaporation preventing layer 25 and a light absorbing layer 24 are etched selectively to such a depth that the light absorbing layer 24 is left properly (e.g., about 1,000 Angstrom ) thereby forming a stripe groove 30. By heating the substrate 10 at about 740 deg.C with exposing it to arsenic molecular beams, the impurities deposited on it during the etching process are evaporated and further a part of or all of the surface protecting layer 26 and the left light absorbing layer 24 is evaporated. A temperature of the substrate 10 is determined to be about 600 deg.C and the second upper clad layer 41 and a cap layer 42 consisting of P type GaAs are laminated in order to form the second grown layer 40. |
| 公开日期 | 1989-08-09 |
| 申请日期 | 1984-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,ISHIDA JUJI,et al. -. JP1989037873B2. 1989-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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