Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YAGI TETSUYA; KIMURA HIDE |
| 发表日期 | 1989-11-21 |
| 专利号 | JP1989289184A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent crystal defects in the vicinity of a re-grown interface for obtaining a laser device longer in service life and higher in reliability by a method wherein meltback is effected, just before the second epitaxial growth process, for the removal of a part of a P-type GaAs active Iayer and of an N-type GaAs current stopping Iayer oxidized in a stripe shape trench forming process. CONSTITUTION:In the first epitaxial growth process, an N-type GaAs layer 2, an N-type AlGaAs first clad Iayer 3, a P-type AlGaAs active layer 4, a P-type AlGaAs second clad layer 5, a P-type GaAs active Iayer 6, an N-type AlGaAs etching stopper layer 7, and an N-type GaAs current stopping layer 8 are formed, in that order, all on an N-type GaAs substrate A process follows wherein a P-type Al GaAs third clad layer 9 and a P-type GaAs contact layer 10 are deposited and made to grow by liquid phase epitaxy on the N-type GaAs current stopping layer 8, which is accomplished just after the removal in a meltback process of the surfaces exposed in the trench 11, which surfaces were oxidized when a trench 11 was provided, of the P-type GaAs active layer 6 and of the N-type GaAs current stopping Iayer 8. This method prevents the generation of a deep Ievel attributable to crystal defects. |
| 公开日期 | 1989-11-21 |
| 申请日期 | 1988-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA,KIMURA HIDE. Manufacture of semiconductor laser device. JP1989289184A. 1989-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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