Semiconductor laser element
文献类型：专利
| 作者 | KAWAI YOSHIO; WATANABE AKIRA; SANO KAZUYA; YAMADA TOMOYUKI |
| 发表日期 | 1985-10-08 |
| 专利号 | JP1985198884A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a long-lived semiconductor laser having a small current threshold value utilizing a dry etching by a method wherein resonator end face forming layers consisting of a prescribed material are provided in parts, where the end faces of the resonator are constituted, and the outside surfaces of a pair of the forming layers are used as the end faces of the resonator. CONSTITUTION:Resonator end face forming layers 6a and 6b consisting of a material (AlGaAs insulator and so forth), which has a band gap larger than that of an active layer 3 and whereon current doesn't run when voltage has been impressed between electrodes, are provided on the outside parts of both end faces 5a and 5b, which are heading for a laser oscillating direction A, of three layers of a first clad layer (n type AlGaAs layer) 2, the active layer (GaAs layer) 3 and a second clad layer (p type AlGaAs layer) 4, which are constituting a resonator on a GaAs substrate The outside surfaces of the layers 6a and 6b are formed into smooth reflective surfaces arranged in parallel with each other to use as the end faces of the resonator. The thicknesses W of the layers 6a and 6b are made larger than those of regions where suffer damage by performing a dry etching. As a result, a long-lived semiconductor laser having a small current threshold value can be obtained. |
| 公开日期 | 1985-10-08 |
| 申请日期 | 1984-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAWAI YOSHIO,WATANABE AKIRA,SANO KAZUYA,et al. Semiconductor laser element. JP1985198884A. 1985-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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