Semiconductor light emitting element
文献类型：专利
| 作者 | EBARA MASAHIRO |
| 发表日期 | 1992-02-14 |
| 专利号 | JP1992044285A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To improve reverse withstand voltage by removing a part having no relation to a light emitting function of an outer periphery in contact with the peripheral wall of an element of an electrode formed at least on one side surface of a semiconductor light emitting element. CONSTITUTION:A part not covered with a mask 7 of a semiconductor layer 5 is etched to a predetermined depth to form a ridge After the etching mask 7 is further removed, the entire surface of the layer 5 is coated with heat resistant high resistance resin 2 in thickness of the degree that the upper surface becomes flat and cured. Thereafter, the resin 2 is removed from an upper part until reaching the top of the ridge In order to remove resin, ashing by an oxygen plasma is normally conducted. Then, a p-type side electrode 3 is deposited on the layer 5, and an etching mask 6 of the same shape as that of an electrode to remain on the electrode 3 is further formed. An entire element is immersed in an electrode etchant for about 20 sec to remove the part of the electrode 3, not covered with the mask 6 by etching. The mask 6 is removed by solvent. Thus, a pass of a surface leakage current is not almost formed, its reverse withstand voltage can be improved, thereby improving reliability of a semiconductor light emitting element. |
| 公开日期 | 1992-02-14 |
| 申请日期 | 1990-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81698]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | EBARA MASAHIRO. Semiconductor light emitting element. JP1992044285A. 1992-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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