Distributed reflection semiconductor laser
文献类型：专利
| 作者 | KATSUTA HIROHIKO; SUEMATSU YASUHARU |
| 发表日期 | 1987-09-29 |
| 专利号 | JP1987221176A |
| 著作权人 | SHINGIJUTSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To form a reverse P-N junction to an injection current of a first semiconductor layer having a conductivity type opposite to that of the substrate and a second semiconductor layer having the same conductivity type as that of the substrate at the external waveguide region and to contrive to make to nearly nil the leakage current to pass through the external waveguide region by a method wherein these both semiconductor layers are laminated in order between the external waveguide layer in the external waveguide region and the substrate. CONSTITUTION:In a distributed reflection type semiconductor layer (BIG laser), a N-type InP first semiconductor layer 15 having a conductivity type opposite to that of a P-type InP substrate 1 and a P-type InP second semiconductor layer 16 having the same conductivity type as that of the substrate are laminated in order on the substrate 1 and an InGaAsP active waveguide layer 3 and an N-type InGaAsP external waveguide layer 5 are formed on this second semiconductor layer 16. Provided that, in this case, the first semiconductor layer 15 is not formed downward of the active waveguide layer 3. Moreover, in addition to these layers, distributed Bragg-reflectors 10 provided along the external waveguide layer 5, an N-type InP protective layer 4 formed on the active waveguide layer 3, a clad layer 6 formed on the external waveguide layer 5, an SiO2 film 7 and electrode 8a and 8b are provided. |
| 公开日期 | 1987-09-29 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81704]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | KATSUTA HIROHIKO,SUEMATSU YASUHARU. Distributed reflection semiconductor laser. JP1987221176A. 1987-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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