Semiconductor laser element
文献类型：专利
| 作者 | OKUMURA TOSHIYUKI; NAKATSU HIROSHI; TAKIGUCHI HARUHISA |
| 发表日期 | 1990-11-28 |
| 专利号 | JP1990288287A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element of long life having high heat radiation effect by protecting, with crystalline AlN, the resonator end face of a semiconductor laser element in the line being selected from the groups consisting of GaAlAs line and InGaAsP line. CONSTITUTION:A semiconductor laser element has VSIS structure, and after forming an n-GaAs current blocking layer 2 on a p-GaAs substrate 1 by epitaxial growth, a stripe-shaped V-letter groove 7 reaching the substrate 1 is from the top of the current blocking layer 2 is formed by photolithography method and etching. Next, a p-GaAlAs clad layer 3, an n-GaAlAs active layer 4, an n-GaAlAs clad layer 5 and an n-GaAs cap layer 6 are laminated in order by epitaxial growth, and the substrate for which epitaxial growth is done is cleaved so as to form edge faces, and then on the edge faces, crystalline AlN edge face protective films 8 are formed by reactive sputtering method. As a result, a semiconductor laser element of long life, wherein the stress at the edge face is reduced, heat radiating effect is elevated, and the deterioration of the edge face is suppressed, can be obtained. |
| 公开日期 | 1990-11-28 |
| 申请日期 | 1989-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81706]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | OKUMURA TOSHIYUKI,NAKATSU HIROSHI,TAKIGUCHI HARUHISA. Semiconductor laser element. JP1990288287A. 1990-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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