Semiconductor light-emitting element
文献类型：专利
| 作者 | MATSUOKA TAKASHI; SASAKI TORU; KATSUI AKINORI |
| 发表日期 | 1990-09-12 |
| 专利号 | JP1990229475A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To obtain high quality crystals with minimum defects by epitaxially growing, on a substrate, crystals having lattice conformity with a substrate. CONSTITUTION:A semiconductor light-emitting element consists of a 5mum thick N-type InGaN layer 7 grown on an MgO substrate 6 and having lattice conformity with the substrate, a 0.5mum thick light-emitting layer 8 of InGaN doped with Zn to increase a resistance and having lattice conformity with the substrate, an electrode 9 on the light-emitting layer and an ohmic electrode 10 on the N-type layer 7. When a positive voltage is applied to the electrode 9 and a negative voltage is applied to the electrode 10, the light-emitting layer 8 emits light at a wavelength of 570nm. An extremely high external quantum efficiency of 0.45% can be obtained. It can be considered that this is because when crystals having a lattice constant matched with that of the substrate are grown on the substrate those crystals have higher crystallinity. Further, if the InGaN layer used in the element of the present invention is doped with aluminum under condition such that it has lattice conformity with the substrate, the element is enabled to emit light up to a ultraviolet region of about 413nm. |
| 公开日期 | 1990-09-12 |
| 申请日期 | 1989-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | MATSUOKA TAKASHI,SASAKI TORU,KATSUI AKINORI. Semiconductor light-emitting element. JP1990229475A. 1990-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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