Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | TABUCHI HARUHIKO; HANAMITSU KIYOSHI |
| 发表日期 | 1983-12-22 |
| 专利号 | JP1983220485A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain high reliability by forming a clad layer which has narrow striped groove from an opening at the bottom and forming an active layer in the groove, thereby stabilizing a lateral mode. CONSTITUTION:A striped n type GaAlAs layer 10 is formed on an n type GaAs substrate 9. An n type GaAlAs clad layer 12 is grown by a liquid phase epitaxial growth method on the surfaces of the substrate 9 and the layer 10. At this time, a groove 13 which is upwardly and laterally grown at an angle of approx. 60 deg. and narrower than the opening at the bottom, is formed due to the difference of the growing velocities between the GaAs and the GaAlAs. Then, a GaAs active layer 14, a p type GaAlAs clad layer 15, an n type GaAs cap layer 16 are sequentially formed in the groove 13. When thus manufactured, the width of the layer 14 may be formed to the size of 3mum or less. Accordingly, lateral mode can be stabilized, and a semiconductor light emitting device having high reliability can be obtained. |
| 公开日期 | 1983-12-22 |
| 申请日期 | 1982-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TABUCHI HARUHIKO,HANAMITSU KIYOSHI. Semiconductor light emitting device and manufacture thereof. JP1983220485A. 1983-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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