Manufacture of semiconductor laser
文献类型：专利
| 作者 | TADA KENTARO |
| 发表日期 | 1992-10-12 |
| 专利号 | JP1992287390A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the adsorption of Zn to the internal wall of a reaction tube or susceptor. CONSTITUTION:In a process for successively forming an n-type clad layer 22, active layer 23, p-type clad layer 24, and p-type GaAs contact layer 25 on an n-type GaAs substrate 21 by a reduced pressure vapor growth method, a substrate the face orientation of which is away from (001) is used as the n-type GaAs substrate. When this manufacturing method is used, crystals can be grown with a low flow rate of Zn and the adsorption of Zn to the internal wall of a reaction tube or susceptor can be prevented, since the Zn doping efficiency can be improved. When the adsorption of Zn to the internal wall of a reaction tube or susceptor is suppressed in such way, evaporation of Zn during a vapor phase can be prevented in the crystal growing process and the device characteristic can be improved. |
| 公开日期 | 1992-10-12 |
| 申请日期 | 1991-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TADA KENTARO. Manufacture of semiconductor laser. JP1992287390A. 1992-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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