Semiconductor light emitting device
文献类型：专利
| 作者 | HANAMITSU KIYOSHI; SHIMA KATSUTO; OOSAKA SHIGEO; SEKI KATSUJI; FUJIWARA TAKAO |
| 发表日期 | 1983-05-02 |
| 专利号 | JP1983073180A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To generate two laser beams using one chip by arranging two electrodes interposing an impurity region between the two by a method wherein the stripe type impurity region to cross the center of a double hetero junction semiconductor layer and to demarcate a current passage having depth to reach a substrate is provided. CONSTITUTION:A current obstructing layer 5 and an active layer 6 to generate a laser oscillation are formed on a p type GaAs substrate 2, and the active layer 6 thereof is put between a first and a second clad layers 4, 7 having forbidden band gaps larger than the active layer 6 to form a double hetero junction semiconductor layer. A stripe type zinc diffusion region 20 to cross the center part of the semiconductor layer thereof and moreover having depth to reach the substrate 2 is provided, and electrodes 9, 9' are formed on both the sides of the region 20. A current 23 is made to flow toward the electrodes 9, 9' thereof to form laser beam emitting regions 21, 22 in the active layer 6 to enable to obtain two laser beams. The laser beam is outputted from the region 21 by applying a voltage to the electrode 9, and the laser beam is outputted from the region 22 when a voltage is applied to the electrode 9', and reliability of the device is enhanced. |
| 公开日期 | 1983-05-02 |
| 申请日期 | 1981-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | HANAMITSU KIYOSHI,SHIMA KATSUTO,OOSAKA SHIGEO,et al. Semiconductor light emitting device. JP1983073180A. 1983-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。