半導体レーザ素子
文献类型：专利
| 作者 | 田中 俊明; 梶村 俊 |
| 发表日期 | 1997-11-28 |
| 专利号 | JP2723921B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element having the characteristics of high output power and low noises required for a light source for optical disks by providing a multiple-quantum-well structure for the active layer of a self-oscillating laser. CONSTITUTION:On an N-type GaAs substrate 1, the following layers are sequentially grown as crystals at first by an organic metal vapor growth (MOCVD) method and the like: an N-type GaAs buffer layer 2; an undoped AlGaAs multiple-quantum-well structured active layer 4; a P-type AlxGa1-xAs clad layer 5; and a P-type GaAs layer 6. Thereafter, an insulating film is formed on the upper part of the crystal. A stripe shaped ridge waveguide 11 is formed by utilizing the mask of said insulating film. With the mask of the insulating film made to remain, an N-GaAs current narrowing layer 7 is selectively grown as a crystal by the same height as that of the step difference of the ridge. The mask of the insulating film is etched away. Thereafter, a P- GaAs embedded layer 8 undergoes crystal growing again. In this way, the generated optical output and the self-oscillating optical output can be improved by using the multiple-quantum-well structure for the active layer 4. Thus the characteristics of high output power and low noises of the semiconductor laser can be improved. |
| 公开日期 | 1998-03-09 |
| 申请日期 | 1988-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 田中 俊明,梶村 俊. 半導体レーザ素子. JP2723921B2. 1997-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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