Semiconductor laser
文献类型：专利
| 作者 | YANASE TOMOO |
| 发表日期 | 1987-02-07 |
| 专利号 | JP1987029190A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize stable oscillation in a single mode, by having double hetero- structure and composition in which luminous wavelength by shell-to-shell transition of inner shell electrons in transition metal impurities mixed in an active layer is made not shorter than one by recombination of injection carriers. CONSTITUTION:Transition metal impurities are mixed in an active layer of semiconductor laser having double hetero structure. To make a material forming the double hetero structure, zinc Zn-doped InP 11 serves as P-type clad layer, sulfur S-doped InP 12 as N-type clad layer, and erbium Er-doped InGaAsP 13 as active layer. Excitation is performed by current injection in which holes are injected from a P side electrode 14 and electrons into an N side electrode 15. Both sides of the active layer are formed in embedded composition of high resistance InP layer 16 so that the excitation current flows concentrated into the Er-InGaAsP 13 with effect. Thus, oscillation by shell-to-shell transition of inner shell electrons in the mixed transition metal impurities can be realized with extremely narrow gain width of 10-10Hz and stable frequency in a single axial mode. |
| 公开日期 | 1987-02-07 |
| 申请日期 | 1985-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81759]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO. Semiconductor laser. JP1987029190A. 1987-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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