Manufacture of semiconductor laser
文献类型：专利
| 作者 | HAYASHI NOBUHIKO; ABE HISASHI |
| 发表日期 | 1992-12-16 |
| 专利号 | JP1992364085A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To suppress absorption of laser beam at a light emitting end surface to prevent temperature rise by irradiating an area near the light emitting end surface of a semiconductor laser having a beam activating layer with an energy beam. CONSTITUTION:When irradiated with an energy beam, aluminum composition value at a part of beam activating layer 3a increases up to 0.3 from about 0. In general, increase of this aluminum composition value works for enlarging an optical forbidden band width of AlxGa1-xAs, because Zn included in a P-type clad layer 5 near a GRIN-SCH layer 3 is diffused into the beam activating layer 3a when it is irradiated with an energy beam. Therefore, even after the irradiation of light beam, carrier concentration in the beam activating layer 3a in the area near the light emitting end surface does not become excessive, free carrier loss at the light emitting end surface can be lowered and expansion of an optical forbidden band width of the beam activating layer 3a can be generated only in the part irradiated with an energy beam. |
| 公开日期 | 1992-12-16 |
| 申请日期 | 1991-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HAYASHI NOBUHIKO,ABE HISASHI. Manufacture of semiconductor laser. JP1992364085A. 1992-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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