Semiconductor laser device
文献类型：专利
| 作者 | TAKAMI AKIHIRO; MURAKAMI TAKASHI |
| 发表日期 | 1988-05-09 |
| 专利号 | JP1988104495A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate the deterioration of a diffraction grating due to meltback at the time of crystal growth and to contrive to obtain the diffraction grating of good quality by a method wherein a semiconductor laser is provided with a clad layer of a flat structure, wherein mixed crystal parts and superlattice structure parts are regularly repeated, and this clad layer is utilized as the diffraction grating. CONSTITUTION:GaAs-AlAs superlattice structure parts 2A and AlGaAs mixed crystal parts 2B, made by Si ion implantation in a GaAs-AlAs superlattice structure at a pitch of about 3000Angstrom and by an annealing, are provided on an N-type GaAs substrate By turning the GaAs-AlAs superlattice structure into a mixed crystal at a pitch of about 3000Angstrom , the periodic change of the refractive index can be obtained. For example, if the superlattice structure is turned into a mixed crystal and becomes an Al0.53Ga0.47As superlattice structure, the refractive index becomes smaller by 0.2. A clad layer having the periodic change of a refractive index at a pitch of 3000Angstrom or thereabouts can be used as a tertiary diffraction grating to light to ooze out to a guide layer 3 from an active layer 4. |
| 公开日期 | 1988-05-09 |
| 申请日期 | 1986-10-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAMI AKIHIRO,MURAKAMI TAKASHI. Semiconductor laser device. JP1988104495A. 1988-05-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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