Buried type semiconductor laser
文献类型：专利
| 作者 | OISHI AKIO |
| 发表日期 | 1991-09-09 |
| 专利号 | JP1991205887A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to embody a buried structure with ease even in the case of a semiconductor laser provided with cladding made of a material which is hard to make a buried growth by lattice-maching an active layer with a material system, which is different from a cladding layer, on a buried layer and using a 111-V group semiconductor whose band width is greater than that of the active layer. CONSTITUTION:An attempt is made to grow an n-(Al0.6Ga0.4)0.51In0.49P cladding layer 2, an In0.49Ga0.51P active layer 3, p-(Al0.6Ga0.4)0.51In0.49P cladding layer 4, and a p-GaAs cap layer 5 on an n-Ga substrate 1 and form reverse mesa stripes, and bury both sides of the mesa stripes with a p-Al0.5Ga0.2As layer 6, and an n-Al0.8Ga0.2As layer 7, which are different from an AlGaInP system of the cladding layer. In this case, the x of the AlxGa1-xAs used for embedding growth is adapted to be larger than the band width of the AlGaInP active layer and fail to exceed a differential lattice constant of 0.2% of the active layer as well. |
| 公开日期 | 1991-09-09 |
| 申请日期 | 1990-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81773]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO. Buried type semiconductor laser. JP1991205887A. 1991-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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