Semiconductor light emitting device
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1989-02-17 |
| 专利号 | JP1989045187A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To make it possible to take out an optical output in the direction perpendicular to the substrate, by forming a current constriction layer in the direction parallel with the principal surface of the substrate, forming a recess in the laminated section on the substrate in the direction perpendicular to the principal surface, and burying part of the light emitting layer in the recess. CONSTITUTION:In a semi-insulating GaAs layer 110 which is a constriction layer, a substantially recessed part 140 of a substantially cylindrical shape is formed at the principal surface side of a substrate 101 or the lamination side of each layer in the direction perpendicular to the substrate 101, and the lower part of the step of the substantially recessed part 140 is formed so as to reach an N-Al0.4Ga0.6As clad layer 102. And a P-GaAs layer 103 is formed so as to bury the upper part of the GaAs layer 110 and the inside of the substantially recessed part 140 of a substantially cylindrical shape. Accordingly, by flowing a current in both P-side ohmic electrode 106 and N-side ohmic electrode 107, a current is injected into the substantially recessed part 140 which is an active region, thereby producing light emission due to the recombination of carriers. With this set-up, the emitted light can be taken out as an optical output 120 from the upper opening 150 of the device vertically and upwardly of the substrate 10 |
| 公开日期 | 1989-02-17 |
| 申请日期 | 1987-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81780]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor light emitting device. JP1989045187A. 1989-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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