Semiconductor laser device
文献类型：专利
| 作者 | KUME MASAHIRO; WADA MASARU; ITO KUNIO; HAMADA TAKESHI |
| 发表日期 | 1987-01-20 |
| 专利号 | JP1987011288A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser device which has a stable vertical mode by a method wherein a semiconductor laser element is etched and divided into two elements whose respective resonance end surfaces face each other and a column lens which converges the light is buried between the two divided elements and the laser beam converged by the lens is emitted from one end surface of the element. CONSTITUTION:A cladding layer 2, an activation layer 3 and a cladding layer 5 are deposited and laminated on a GaAs substrate 1 and those laminated layers are divided into two by etching and a column lens 13, which reaches the substrate 1, is buried between divided layers and fixed with ultraviolet curing resin 14. One of the divided layers is used as a photodetector 12 and the other is used as a laser element 11 and an electrode 7 is formed on the laser element 11 and an electrode 6 is formed on the back plane of the substrate 1 to complete a semiconductor laser device. Thus, a laser beam emitted from the element 11 is at first converged by the lens 13 and focused on the surface of the detector 12 and then returned on the same path to the opposite direction into the element 11 and emitted as a laser beam 9 from the outside end surface of the element 1 |
| 公开日期 | 1987-01-20 |
| 申请日期 | 1985-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUME MASAHIRO,WADA MASARU,ITO KUNIO,et al. Semiconductor laser device. JP1987011288A. 1987-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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