Semiconductor laser
文献类型：专利
| 作者 | OOMURA ETSUJI; NAMISAKI HIROBUMI; SUZAKI WATARU |
| 发表日期 | 1982-10-26 |
| 专利号 | JP1982173993A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize transverse mode with low threshold value, by constituting a central part of active regions among clad layers adjacent to the active regions of semiconductor layers with high refractive indexes and the periphery thereof of those with low ones. CONSTITUTION:Among the clad layers adjacent to the active region 7, layers on an N-InP semiconductor substrate 8 side are constituted of two parts the first semiconductor layer 9 of N-InP and second one 10 of P-InP. In general, in III-V group compound semiconductors of InP, etc., P types of conductivity types have refractive indexes some higher than those of N types. Therefore, in the central part of the active region 7, clad layers are constituted of a layer 10 with high refractive index. On the other hand, in the periphery separated from the region 7, they are constituted of the layers 10 and 9. As the result, the central part of the active region 7 has high effective refractive index with the width L with laser light stabilized to exist in the active region 7. |
| 公开日期 | 1982-10-26 |
| 申请日期 | 1981-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | OOMURA ETSUJI,NAMISAKI HIROBUMI,SUZAKI WATARU. Semiconductor laser. JP1982173993A. 1982-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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