半導体装置の製造方法
文献类型：专利
| 作者 | 今井 元; 高幣 謙一郎 |
| 发表日期 | 1994-07-06 |
| 专利号 | JP1994052743B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To enable to freely select the potential of the back surface electrode of a semiconductor element by selectively coating the surface of a conductive layer formed on the surface of a high resistance wafer with a bonding material to be melted, and securing the element onto a heat sink formed by dividing the wafer. CONSTITUTION:Conductive layers 2, 2' are metallized on both side surfaces of a high resistance silicon wafer 1, and a bonding material to be melted is bonded insularly on a semiconductor element forming region 3. The wafer 1 is diced along a line 4, and divided into heat sinks. An element 5 having a back surface electrode 5' and a front surface electrode 5' is secured through the regions 3 to the heat sinks Then, the heat sink thus secured with the element 5 is mounted on a supporting member 6. Since the heat sink of this block shape is not metallized on the side surface 1', the upper and lower conductive layers 2, 2' are insulated from each other, the potentials of the electrodes 5' contacted with the heat sinks can be freely selected, thereby inputting a signal to the electrode. |
| 公开日期 | 1994-07-06 |
| 申请日期 | 1982-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 今井 元,高幣 謙一郎. 半導体装置の製造方法. JP1994052743B2. 1994-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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