Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1985-09-26 |
| 专利号 | JP1985189279A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To suppress in a low degree the noise generated by a returned light without having a high frequency current superposed on a driving current by a method wherein a region where a fundamental mode alone will be waveguided and another region which allows the waveguide of a higher transverse mode are provided on the photo waveguide region formed in longitudinal direction of a resonator. CONSTITUTION:The Al0.12Ga0.88As layer 4 located on the constricted position of a layer 5 can be easily removed by performing an etching for several seconds using a chemical etchant and it is formed in the width same as that of an Al0.6Ga0.4As layer 5. Then, an N type Al0.4Ga0.6As layer 9, a P type Al0.35 Ga0.65As layer 10, and an N type Al0.4 Ga0.6As layer 11 are successively formed by performing the second crystal growing process. At this point, the growth of said N type Al0.4Ga0.7As layer 9 can be stopped when the upper side of the boundary surface of a GaAs substrate 1 and an N type Al0.4Ga0.6As layer 2 are brought to come in coincidence with each other, and the P type Al0.35Ga0.65As layer 10 which will be formed subsequently can also be stopped its growth when its upper face is coincided with the layer edge of the constiriction 8 formed at a mesa part. Then, a P type impurity diffusion layer 12 is formed by diffusing Zn and, besides, a P type ohmic electrode 13 and an N type ohmic electrode 14 are formed. |
| 公开日期 | 1985-09-26 |
| 申请日期 | 1984-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1985189279A. 1985-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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