Buried type semiconductor laser
文献类型：专利
| 作者 | NAKAJIMA KAZUO; TANAHASHI TOSHIYUKI |
| 发表日期 | 1986-10-14 |
| 专利号 | JP1986230388A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce reactive currents, which do not contribute to oscillation, and to improve responsibility at high speed easily by forming an insulating film coating the side surface of at least a mesa along the surface of a buried region and consisting of a semi-insulating semiconductor lattice-matched with an active layer. CONSTITUTION:In a buried type semiconductor laser, insulating films 16, which consist of a semi-insulating semiconductor lattice-matched with an active layer 4 and coat the side surfaces of at least a mesa 7 along the surfaces of buried regions 8 are formed into the buried regions 8 on both sides of the band-shaped mesa 7 containing the active layer 4 and shaped onto a semiconductor substrate 1 as a light-emitting section. The insulating film 16 inhibits the generation of reactive currents and functions as the unnecessitating of a P-N junction in the opposite direction in the buried region 8, and does not generate a protuberance on growth. A semiconductor such as InP is buried onto the insulating film 16 in the buried region 8 through a known method, through which the trouble of protuberance is not generated, such as a liquid-phase epitaxial growth method, or plastics, etc. for holding strength are buried, and a buried layer 17 may be formed previously. |
| 公开日期 | 1986-10-14 |
| 申请日期 | 1985-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAJIMA KAZUO,TANAHASHI TOSHIYUKI. Buried type semiconductor laser. JP1986230388A. 1986-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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