Semiconductor laser device
文献类型：专利
| 作者 | KUDO HIROAKI; TAKIGUCHI HARUHISA; KANEIWA SHINJI; SAKANE CHITOSE |
| 发表日期 | 1988-11-22 |
| 专利号 | JP1988285993A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate the formation of a diffraction grating and to improve the coupling efficiency of the grating by forming the grating as a tertiary diffraction grating, and forming the sectional shape of periodic uneven state substantially in a rectangular shape. CONSTITUTION:An n-type current blocking layer 2, a p-type clad layer 3, a p-type active layer 4, an n-type InGaPAs guide layer 5, an n-type clad layer 6, a cap layer 7 are laminated on a p-type GaAs substrate 1, and electrodes 8, 9 are respectively formed on the lower surface of the substrate 1 and the upper surface of the layer 7. Periodic uneven state is formed on a boundary between the layers 5 and 6 as a diffraction grating. The groove of the grating is directed in a direction (0-1-1), and uneven state is periodically continued in a direction (0-1 1). The period of the uneven state is so set that the grating becomes tertiary. The shape of the grating is rectangular wave shape. Thus, the grating is formed in the tertiary rectangular wave shape to increase the pitch of the grating. Accordingly, the control of marking and shape is facilitated, and the coupling efficiency is improved to reduce a threshold current. |
| 公开日期 | 1988-11-22 |
| 申请日期 | 1987-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KUDO HIROAKI,TAKIGUCHI HARUHISA,KANEIWA SHINJI,et al. Semiconductor laser device. JP1988285993A. 1988-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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