Semiconductor luminescent device
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU |
| 发表日期 | 1985-03-23 |
| 专利号 | JP1985052075A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminescent device |
| 英文摘要 | PURPOSE:To prevent the deffusion of the electrode metal to the reflecting surface and to contrive the stabilization of characteristics by a method wherein the reflecting surface, which consists of mutually parallel two crystal planes, at the active region of the semiconductor laser is coated with a coating. CONSTITUTION:A clad layer 2, an active layer 3, a cald layer 4, an insulating layer 5 and electrodes 6 and 7 are formed on a lead telluride semiconductor substrate 1 and semiconductor laser is obtained. The active region of the laser is 3A and a reflector surface is formed by cleaving the semiconductor substrate crystal at the region 3A. For preventing it for the electrode metal to diffuse to the reflector surface, a coating 8 consisting of magnesium fluoride, barium fluoride, calcium fluoride or arsenious trisulfide sol is provided. According to such a way, laser beams are prevented from being shielded and the reflector surface is also prevented from being deteriorated as well, thereby enabling to stabilize the characteristics. |
| 公开日期 | 1985-03-23 |
| 申请日期 | 1983-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Semiconductor luminescent device. JP1985052075A. 1985-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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