Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | YAMAZAKI HIROYUKI |
| 发表日期 | 1992-11-18 |
| 专利号 | JP1992330793A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To suppress a space hole burning in an axial direction by so composing a waveguide structure of a laminating direction near a center of a resonator that an equivalent refractive index becomes small. CONSTITUTION:An InGaAsP optical guide layer 8, an InP spacer layer 7, an InGaAsP active layer 1 and an InGaAsP optical guide layer 2 are sequentially grown on an n-type InP layer 9 formed with a uniform diffraction grating having no phase shift by an MOVPE method. Then, after only the layer 2 at a center of a resonator is removed by etching, an InGaAsP optical guide layer 3, a p-type InP layer 4, and a p-type InGaAs cap layer 5 are sequentially grown again by the MOVPE method, and electrodes 6, 10 are formed on the layers 5, 9. In order to narrow this laser in a spectral beam width, it is cut out in a length of 1000mum, and a reflection preventive film 11 is provided on an end face. Thus, a semiconductor laser having a high output, a narrow spectral beam width, and excellent characteristics can be obtained. |
| 公开日期 | 1992-11-18 |
| 申请日期 | 1991-02-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81813]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI HIROYUKI. Distributed feedback type semiconductor laser. JP1992330793A. 1992-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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