Semiconductor light emitting device
文献类型：专利
| 作者 | NOMURA, YASUHIKO; HAYASHI, NOBUHIKO; SHONO, MASAYUKI |
| 发表日期 | 2005-10-18 |
| 专利号 | US6956884 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion. |
| 公开日期 | 2005-10-18 |
| 申请日期 | 2000-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81815]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | NOMURA, YASUHIKO,HAYASHI, NOBUHIKO,SHONO, MASAYUKI. Semiconductor light emitting device. US6956884. 2005-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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