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文献类型：专利
| 作者 | OKUDA SHINYA |
| 发表日期 | 1989-10-03 |
| 专利号 | JP1989045234B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent the deterioration of a clad layer caused by a difference of expansion coefficient between the mask used for forming an inverted mesa structure including an active layer and the underlying clad layer by laminating P-InGaAsP which functions like a protective film between the mask and the clad layer. CONSTITUTION:On the surface of an N-InP substrate 11, an InGaAs layer 12m a P-InP layer 13, a P-InGaAsP layer 14 are laminated and further the surface is coated with a silicon dioxide film of 5mum width as a mask 15 into stripe form. Next, mesa etching is done by using an etching solution of boron and methanol mixed by a ratio 1:100. As a current constriction layer, a P-InP layer 16, an N-InP layer 17 and a P-InP layer 18 are buried. This silicon dioxide mask 15 is removed by etching using hydrofluoric acid and the P-InGaAsP layer 14 is removed by etching using a mixed solution of hydrofluoric acid and sulfuric acid of ratio 1:1, thereby forming a P-InP layer 19 and a P-InGaAsP layer 20. After that, electrodes are formed by the use of Au/Zn, Au/Sn on both end planes of the element and a high-performance semiconductor laser can be obtained. |
| 公开日期 | 1989-10-03 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKUDA SHINYA. -. JP1989045234B2. 1989-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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