Semiconductor light-emitting device
文献类型：专利
| 作者 | OKUDA, HIROSHI C/O OSAKA WORKS OF SUMITOMO |
| 发表日期 | 1985-05-08 |
| 专利号 | EP0140645A2 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | A semiconductor light-emitting device according to the invention is made by forming an undoped In1-XGaXAs1-YPY active layer (3) on an n-lnP clad layer (2), a p-In1-XGaXAs1-YPY active layer (4) on the undoped active layer, and a p-n junction position at the interface between the n-InP layer (2) and the undoped In1-XGaXAs1-YPY active layer (3) or in the neighbourhood thereof. By use of this structure, the heretofore inevitable problem of a remote junction is overcome, and the half-value width of the light-emitting spectrum is reduced. Therefore, the semiconductor light-emitting device provides a higher response frequency and a larger light-emitting output than a conventional semiconductor light-emitting device. |
| 公开日期 | 1985-05-08 |
| 申请日期 | 1984-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES LIMITED |
| 推荐引用方式 GB/T 7714 | OKUDA, HIROSHI C/O OSAKA WORKS OF SUMITOMO. Semiconductor light-emitting device. EP0140645A2. 1985-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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