Semiconductor laser
文献类型：专利
| 作者 | TAKEMOTO AKIRA; OKURA YUJI; KAWAMA YOSHITATSU; KAKIMOTO SHOICHI |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145780A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distributed feedback semiconductor laser possessed of a required coupling constant by a method wherein a diffraction grating is formed, the depth of the grating is measured, and a layer which controls the semiconductor laser in coupling constant corresponding to the depth concerned is formed. CONSTITUTION:A P-type InP clad layer 2, an In0.58Ga0.42As0.9P0.1 active layer 3, and an N-type In0.82Ga0.18As0.4P0.6 optical waveguide layer 4 are successively formed on a P-type InP substrate A deepish diffraction grating 5 is provided to the N-type In0.82Ga0.18As0.4P0.6 optical waveguide layer 4 through an interference exposure method so as to make its coupling constant larger than a required coupling constant K. Then, the depth of the diffraction grating 5 is measured, an N-type In0.82Ga0.18As0.4P0.6 coupling constant controlling layer 7 is formed so as to make the diffraction grating 5 adequate in depth to obtain the required coupling constant K, and furthermore an N-type InP clad layer (6) is grown. If the grown layer is different from an N-type InP clad layer 6 is refractive index, it is replaced, whereby a required coupling constant can be obtained the same as above. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81850]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKEMOTO AKIRA,OKURA YUJI,KAWAMA YOSHITATSU,et al. Semiconductor laser. JP1991145780A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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