Semiconductor light emitting device
文献类型：专利
| 作者 | SUZUKI NOBUO; HIRAYAMA YUZO |
| 发表日期 | 1992-08-10 |
| 专利号 | JP1992218994A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve emission efficiency by implanting carriers efficiently to an active layer. CONSTITUTION:On an n-type InP substrate 21 are stacked in order, through an n-type InP buffer layer 12, an InGaAs/InGaAsP multiple quantum well active layer 13, an In0.5218Ga0.0875Al0.3907As carrier overflow preventive layer 14, an In0.77Ga0.23As0.5P0.5 optical wave layer 15. And in the light wave guide pipe 15 is made a primary phase shift structure refractive grating 26, 55mum in Bragg wavelength. Thereon, further, are stacked a p-type Inp clad layer 17 and an InGaAsP contact layer 28. And a p-type ohmic electrode 213 is formed on the InGaAsP contact layer 28 and the p-type InGaAsP contact layer 212, while an n-type ohmic electrode 214 is made at the bottom of the substrate 2 This contact layer 212 and the electrode 214 work in a body as carrier implantation means. |
| 公开日期 | 1992-08-10 |
| 申请日期 | 1991-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81858]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SUZUKI NOBUO,HIRAYAMA YUZO. Semiconductor light emitting device. JP1992218994A. 1992-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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