Double hetero-junction type semiconductor light emitting element
文献类型：专利
| 作者 | KATSUI AKINORI; KAWAGUCHI NOBUHIRO; OKI AKIRA |
| 发表日期 | 1992-05-07 |
| 专利号 | JP1992133479A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-junction type semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable a semiconductor light emitting element to emit visible rays of green to blue light short in wavelength by a method wherein a semiconductor crystal substrate is formed of ZnSe or InxGa1-xAs, a first and a third semiconductor crystal layer are formed of Zn(SwSe1-w), and a second semiconductor crystal layer is formed of (HgyZn1-y) (SzSe1-z). CONSTITUTION:In a double hetero-junction type semiconductor light emitting element, a semiconductor crystal substrate 1 is formed of ZnSe. A semiconductor laminated body 5 is composed of a first, a second, and a third semiconductor crystal layer, 2, 3, and 4, where the crystal layers 2 and 4 serving as a first and a second clad layer are formed of ZnSe, and the crystal layer 3 serving as an active layer is formed of (Hg0.05Zn0.95)Se. |
| 公开日期 | 1992-05-07 |
| 申请日期 | 1990-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81869]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KATSUI AKINORI,KAWAGUCHI NOBUHIRO,OKI AKIRA. Double hetero-junction type semiconductor light emitting element. JP1992133479A. 1992-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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