Distributed reflection semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO HIROKAZU; SUEMATSU YASUHARU |
| 发表日期 | 1987-09-29 |
| 专利号 | JP1987221184A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To make equal the width of the active waveguide layer with the width of the external waveguide layer, whereby to contrive the reduction in the threshold current by a method wherein a diffraction grating is provided on the surface of the substrate side of the external waveguide layer and a clad layer is epitaxially grown on the external waveguide layer until the surface of the laser element becomes nearly flat. CONSTITUTION:A diffraction grating 17 is formed on the upper surface (the surface on the substrate side of an external waveguide layer 18) of a clad layer 12 and is not formed on the upper surface of a clad layer 19 unlike the conventional way. According to such a way, there is no need to make thinner the thickness of the clad layer 19, as a result of which the clad layer 19 can be grown up to the upper surface of a cap layer 15. In this way, if the upper surface of the cap layer 15 is so contrived as to become the same surface as the upper surface of the clad layer 19, the distance from the upper surface of the cap layer 15 to an active waveguide layer 13 becomes equal wit the distance from the upper surface of the clad layer 19 to the external waveguide layer 18, as a result of which in case an etching is performed for forming a mesa striped structure 21, the width of the active waveguide layer 13 becomes perfectly equal with the width of the external waveguide layer 18. |
| 公开日期 | 1987-09-29 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81873]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO HIROKAZU,SUEMATSU YASUHARU. Distributed reflection semiconductor laser. JP1987221184A. 1987-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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